Analog Devices Inc. ADL9005 Wideband Low Noise Amplifier
Analog devises Inc. ADL9005 Wideband Low Noise Amplifier (LNA) is a Gallium Arsenide (GaAs), Monolithic Microwave-Integrated Circuit (MMIC), and pseudomorphic High-Electron Mobility Transistor (pHEMT) RF amplifier. This LNA operates within 0.01GHz to 26.5GHz frequency range and provides a typical gain of 17.5dB from 0.01GHz to 14GHz with a positive gain slope from 14GHz to 20GHz. The ADL9005 LNA also offers a 13.5dBm typical output power at 1dB compression (OP1dB) from 0.01GHz to 20GHz and 2.5dB typical noise figure from 0.01GHz to 14GHz. Additionally, a typical output third-order intercept (OIP3) of 26dBm is achieved from 0.01GHz to 14GHz range requiring just 80mA from a single 5V supply voltage.
The ADL9005 wideband low noise amplifier features inputs and outputs (I/Os) that are internally matched to 50Ω. This makes it ideal for Surface-Mounted Technology (SMT)-based, high capacity microwave radio applications, test instrumentation, military, and communications. The ADL9005 amplifier is housed in a RoHS-compliant LFCSP package with 4mm×4mm dimensions.
Features
- Gallium Arsenide (GaAs) and Monolithic Microwave-Integrated Circuit (MMIC)
- pseudomorphic High-Electron Mobility Transistor (pHEMT)
- Low noise figure:
- 2.5dB typical from 0.01GHz to 14GHz
- High gain:
- 17.5dB typical from 0.01GHz to 14GHz
- Single positive supply
- OP1dB:
- 13.5dBm typical from 0.01GHz to 20GHz
- High OIP3:
- 26dBm typical from 0.01GHz to 14GHz
- RoHS-compliant 24-lead LFCSP (4mm × 4mm) package
Applications
- Test instrumentation
- Military
- Communications
Development Tools
Analog Devices Inc. ADL9005-EVALZ Evaluation Kit
Evaluates the wideband GaAs pseudomorphic high-electron mobility transistor (pHEMT) ADL9005 LNA.
Related Products
Analog Devices Inc. ADL9006 Self-Biased LNA (2-28GHz)
GaAs pHEMT MMIC low noise amplifier that operates between 2GHz and 28GHz.
Typical Circuit Diagram
Published: 2021-03-17
| Updated: 2022-03-11