Analog Devices Inc. ADuM4120 & ADuM4121 Isolated Gate Drivers

Analog Devices Inc. ADuM4120/ADuM4121 Precision Isolated Gate Drivers are 2A single-channel drivers that provide true, galvanic isolation between the input and the output. The gate drivers operate with 2.5V to 6.5V input supplies to enable compatibility with lower voltage systems. The ADuM4120/ADuM4121 Gate Drivers can operate with output voltages up to 35V.

Developed using iCoupler technology, the drivers deliver precision 5kVrms isolation in a 6-lead wide-body SOIC package with 8mm creepage. Analog Devices ADuM4120/ADuM4121's high-speed CMOS and monolithic transformer technology enable the gate drivers to offer reliable control over IGBT/ MOSFET switching characteristics over a wide range of switching voltages. The high common-mode transient immunity (CMTI) and robust drive strength make the ADuM4120/ADuM4121 an excellent option for fast switching technologies.


  • 2.3A peak output current (<2Ω RDSON_x)
  • 2.5V to 6.5V VDD1 input
  • 4.5V to 35V VDD2 output
  • (ADuM4120) UVLO at 2.3V VDD1
  • (ADuM4121) UVLO at 2.5V VDD1
  • Multiple UVLO options on VDD2
  • Grade A-4.4V (typical) positive going threshold
  • Grade B-7.3V (typical) positive going threshold
  • Grade C-11.3V (typical) positive going threshold
  • Precise timing characteristics
  • 79ns maximum isolator and driver propagation delay falling edge (ADuM4120)
  • CMOS input logic levels
  • 150kV/μs common-mode transient immunity
  • Default low output
  • 53ns maximum isolator and driver propagation delay falling edge (ADuM4121)
  • +125°C high junction temperature operation
  • Safety and regulatory approvals (pending)
  • UL recognition per UL 1577
  • 5kVrms for 1 minute SOIC long package
  • CSA Component Acceptance Notice 5A
  • VDE certificate of conformity (pending)
  • DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
  • VIORM = 849V peak
  • 8mm creepage
  • Wide-body, 6-lead SOIC with increased creepage


  • Switching power supplies
  • IGBT/MOSFET gate drivers
  • Industrial inverters
  • Gallium nitride (GaN)/silicon carbide (SiC) power devices

Functional Block Diagram

Published: 2017-10-23 | Updated: 2022-04-26