RAMXEED Parallel Interface FeRAMs

RAMXEED Parallel Interface FeRAMs are FeRAM (Ferroelectric Random Access Memory) chips available in various bit configurations using ferroelectric and silicon gate CMOS process technologies. These devices can retain data without a backup battery, unlike SRAM. The memory cells in the RAMXEED Parallel Interface FeRAM can support 1014 read/write operations, a significant improvement over the read and write operations supported by Flash memory and E2PROM. These FeRAM devices use a pseudo-SRAM interface.

Features

Bit configurations
- MB85R8M1TA - 1,048,576 words × 8 bits
- MB85R8M2TA - 524,288 words × 16 bits
- MS85R4M1TA - 524,288 words × 8 bits
- MS85R4M2TA - 262,144 words × 16 bits
LB and UB data byte control (MS85R4M2TA only) - available configuration of 524,288 words × 8 bits
Read/write endurance
- MB85R8M1TA, MB85R8M2TA - 1014 times/64 bits
- MS85R4M1TA, MS85R4M2TA - 1014 times (+85°C), 1013 times (+105°C)
Data retention
- MB85R8M1TA, MB85R8M2TA - 10 years (+85°C), 95 years (+55°C), over 200 years (+35°C)
- MS85R4M1TA, MS85R4M2TA - 10 years (+105°C), 40 years (+85°C), over 200 years (+35°C)
Low power operation
- MB85R8M1TA, MB85R8M2TA - 18mA (max.) operating power supply current
- MS85R4M1TA, MS85R4M2TA - 16mA (max.) operating power supply current

1.8V to 3.6V operating power supply voltage
150μA (max.) standby current
- MB85R8M1TA, MB85R8M2TA - 10μA (max.) sleep current
- MS85R4M1TA, MS85R4M2TA - 12μA (max.) sleep current
Operating ambient temperature ranges
- MB85R8M1TA, MB85R8M2TA: -40°C to +85°C
- MS85R4M1TA, MS85R4M2TA: -40°C to +105°C
Package options
- MB85R8M1TA, MB85R8M2TA - 48-pin plastic FBGA
- MB85R8M1TA, MB85R8M2TA, MS85R4M1TA, MS85R4M2TA - 44-pin plastic TSOP
RoHS compliant